產(chǎn)品型號:ME2348A
代理品牌:臺灣松木Matsuki
產(chǎn)品封裝:SOT-23
交期時間:現(xiàn)貨一般當天發(fā)貨,預(yù)訂需電話詳情.
發(fā)貨貨倉:深圳、香港、蘇州
熱門標簽:松木Matsuki,松木Matsuki半導(dǎo)體
咨詢熱線:0755-83322522 在線咨詢
產(chǎn)品型號:ME2348A
代理品牌:臺灣松木Matsuki
產(chǎn)品封裝:SOT-23
交期時間:現(xiàn)貨一般當天發(fā)貨,預(yù)訂需電話詳情.
發(fā)貨貨倉:深圳、香港、蘇州
熱門標簽:松木Matsuki,松木Matsuki半導(dǎo)體
咨詢熱線:0755-83322522 在線咨詢
一般說明
MEE2348A-G是一種N溝道增強型功率場效應(yīng)晶體管,采用Force MOS專利的擴展溝槽柵極(ETG)技術(shù)。這項先進技術(shù)是專門為最小化導(dǎo)通電阻和柵極電荷,并增強雪崩能力而量身定制的。
這些設(shè)備特別適用于中壓應(yīng)用,如充電器、適配器、筆記本電腦電源管理和其他照明調(diào)光供電電路,以及非常小的外形表面安裝封裝中所需的低在線功耗。
產(chǎn)品特征
RDS(ON)≤130 mΩ@VGS=10V
RDS(ON)≤205 mΩ@VGS=5V
超高密度電池設(shè)計,可實現(xiàn)極低的RDS(ON)
出色的導(dǎo)通電阻和最大直流電流能力
產(chǎn)品應(yīng)用
電源管理
同步整流
負載開關(guān)
GENERAL DESCRIPTION
The MEE2348A-G is a N-Channel enhancement mode power field effect transistor, using Force-MOS patented Extended Trench Gate(ETG) technology. This advanced technology is especially tailored to minimize on state resistance and gate charge, and enhance avalanche capability.
These devices are particularly suited for medium voltage application such as charger, adapter, notebook computer power management and other lighting dimming powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
FEATURES
RDS(ON)≦130 mΩ@VGS=10V
RDS(ON)≦205 mΩ@VGS=5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
APPLICATIONS
Power Management
Synchronous Rectification
Load Switch