單N溝道高級(jí)功率 MOSFET
特征
·100V/36A,
RDs(ON) =16mΩ(Typ.) @VGs=10V
RDs(on) =21mΩ(Typ.) @VGs=4.5V
·優(yōu)秀的QG RDS(on)產(chǎn)品(FOM)
·SGT科技
·100%雪崩測(cè)試
應(yīng)用
·電源開關(guān)應(yīng)用動(dòng)作
·LED背光
筆記:
①脈沖寬度受安全工作區(qū)限制。
②根據(jù)最大允許結(jié)溫計(jì)算出的連續(xù)電流。
③安裝在1平方英寸銅板上時(shí),t≤10sec。 任何給定應(yīng)用程序中的值
取決于用戶的具體電路板設(shè)計(jì)。
④受TJmax限制,IAS=12A,L=0.5mH,VDD=50V,RG=25Ω,啟動(dòng)TJ=25°C。
⑤脈沖測(cè)試;脈沖寬度≤300μs,占空比≤2%。
⑥設(shè)計(jì)保證,未經(jīng)生產(chǎn)測(cè)試。
Single N-Channel Advanced Power MOSFET
Features
·100V/36A,
RDs(ON) =16mΩ(Typ.) @VGs=10V
RDs(oN) =21mΩ(Typ.) @VGs=4.5V
·Excellent QG RDS(on) product(FOM)
·SGT Technology
·100%Avalanche Tested
Applications
·Power Switching Appli action
·LED Backlighting
Notes:
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③When mounted on 1 inch square copper board, t≤10sec. The value in any given application
depends on the user's specific board design.
④Limited by TJmax, IAS =12A, L=0.5mH, VDD = 50V, RG = 25Ω , Starting TJ = 25°C.
⑤Pulse test;Pulse width≤300μs, duty cycle≤2%.
⑥Guaranteed by design, not subject to production testing.