ME4435/ME4435-G,P溝道30V (D-S) MOSFET
一般說(shuō)明
ME4435是P溝道邏輯增強(qiáng)型功率場(chǎng),效應(yīng)晶體管采用高單元密度、DMOS溝槽技術(shù)生產(chǎn)。這種高密度工藝特別適用于最小化導(dǎo)通電阻。這些器件特別適用于低電壓應(yīng)用,如手機(jī)和筆記本電腦、計(jì)算機(jī)電源管理和其他電池供電電路,這些應(yīng)用需要在非常小的外形表面貼裝封裝中實(shí)現(xiàn)高側(cè)開(kāi)關(guān)和低在線功率損耗。
應(yīng)用
● 筆記本電源管理
● 便攜設(shè)備
● 電池供電系統(tǒng)
● DC/DC 轉(zhuǎn)換器
● 負(fù)載開(kāi)關(guān)
● DSC
● LCD 顯示逆變器
ME4435/ME4435-G,P-Channel 30V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4435 is the P-Channel logic enhancement mode power field,effect transistors are produced using high cell density , DMOS trench ,technology. This high density process is especially tailored to ,minimize on-state resistance. These devices are particularly suited,for low voltage application such as cellular phone and notebook,computer power management and other battery powered circuits,where high-side switching and low in-line power loss are needed in a ,very small outline surface mount package.
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter
特征
● RDS(ON)≦20m?@VGS=-10V
● RDS(ON)≦35m?@VGS=-4.5V ● 超高密度電池設(shè)計(jì),RDS(ON)極低
● 出色的導(dǎo)通電阻和最大直流電流能力
FEATURES
● RDS(ON)≦20m?@VGS=-10V
● RDS(ON)≦35m?@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability