ME2307一般說(shuō)明:
ME2307是P通道邏輯增強(qiáng)模式功率場(chǎng)效應(yīng)晶體管,采用高單元密度的DMOS溝槽技術(shù)。 這種高密度工藝特別適合于最小化通態(tài)電阻。 這些設(shè)備特別適合低壓應(yīng)用,例如:作為手機(jī)和筆記本計(jì)算機(jī)的電源管理以及其他電池供電的電路,在非常小巧的表面貼裝封裝中,需要較低的在線功率損耗。
ME2307應(yīng)用領(lǐng)域:
●筆記本中的電源管理
●便攜式設(shè)備
●電池供電系統(tǒng)
●負(fù)荷開(kāi)關(guān)
●DSC
GENERAL DESCRIPTION
The ME2307 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits
where low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
ME2307特征:
●RDS(ON)≦70mΩ@ VGS = -10V
●RDS(ON)≦95mΩ@VGS=-4.5V
●超高密度電池設(shè)計(jì),可實(shí)現(xiàn)極低的RDS(ON)
FEATURES
● RDS(ON) ≦70m?@VGS=-10V
● RDS(ON) ≦95m?@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)